Physical Properties
GaN is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants. GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle. Gallium nitride compounds also tend to have a high spatial defect frequency, on the order of a hundred million to ten billion defects per square centimeter.
Read more about this topic: Gallium Nitride
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