Structure
h-BN nanomesh is a single sheet of hexagonal boron nitride, which forms on substrates like rhodium Rh(111) or ruthenium Ru(0001) crystals by a self-assembly process.
The unit cell of the h-BN nanomesh consists of 13x13 BN or 12x12 Rh atoms with a lattice constant of 3.2 nm. In a cross-section it means that 13 boron or nitrogen atoms are sitting on 12 rhodium atoms. This implies a modification of the relative positions of each BN towards the substrate atoms within a unit cell, where some bonds are more attractive or repulsive than other (site selective bonding), what induces the corrugation of the nanomesh (see right image with pores and wires).
The nanomesh corrugation amplitude of 0.05 nm causes a strong effect on the electronic structure, where two distinct BN regions are observed. They are easily recognized in the lower right image, which is a scanning tunneling microscopy (STM) measurement, as well as in the lower left image representing a theoretical calculation of the same area. A strongly bounded region assigned to the pores is visible in blue in the left image below (center of bright rings in the right image) and a weakly bound region assigned to the wires appears yellow-red in the left image below (area in-between rings in the right image).
| The right image shows the boron nitride nanomesh measured by STM at 77K, where each "ball" represents one N atom. The center of each ring corresponds to the center of the pores.
The left image is the theoretical calculation of the same area, where the N height relative to the underlying substrate is given. The exact arrangement of Rh, N and B atoms is given for three different areas (blue: pores, yellow-red: wires). |
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